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  • image of Transistors - Bipolar (BJT) - Single>PDTB114ETR
  • image of Transistors - Bipolar (BJT) - Single>PDTB114ETR
PDTB114ETR
Transistors - Bipolar (BJT) - Single
NXP Semiconductors
PDTB114ET - 500
-
Bulk
-
: 0.03

6000

0.03

180

image of Transistors - Bipolar (BJT) - Single>PDTB114ETR
image of Transistors - Bipolar (BJT) - Single>PDTB114ETR
PDTB114ETR
PDTB114ETR
Transistors - Bipolar (BJT) - Single
NXP Semiconductors
PDTB114ET - 500
-
Bulk
-
TYPEDESCRIPTION
MfrNXP Semiconductors
Series-
PackageBulk
Product StatusObsolete
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition140 MHz
Power - Max320 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB
Base Product NumberPDTB114
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