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  • image of Transistors - Bipolar (BJT) - Single, Pre-Biased>DDTD114EC-7-F
  • image of Transistors - Bipolar (BJT) - Single, Pre-Biased>DDTD114EC-7-F
  • image of Transistors - Bipolar (BJT) - Single, Pre-Biased>DDTD114EC-7-F
  • image of Transistors - Bipolar (BJT) - Single, Pre-Biased>DDTD114EC-7-F
DDTD114EC-7-F
Transistors - Bipolar (BJT) - Single, Pre-Biased
Diodes Incorporated
TRANS PREBIAS N
-
Tape & Reel (TR) Cut Tape (CT)
-
: 0.31

1

0.31

0.31

10

0.251

2.51

100

0.133

13.3

500

0.0875

43.75

1000

0.05949

59.49

image of Transistors - Bipolar (BJT) - Single, Pre-Biased>DDTD114EC-7-F
image of Transistors - Bipolar (BJT) - Single, Pre-Biased>DDTD114EC-7-F
image of Transistors - Bipolar (BJT) - Single, Pre-Biased>DDTD114EC-7-F
DDTD114EC-7-F
DDTD114EC-7-F
Transistors - Bipolar (BJT) - Single, Pre-Biased
Diodes Incorporated
TRANS PREBIAS N
-
Tape & Reel (TR) Cut Tape (CT)
-
TYPEDESCRIPTION
MfrDiodes Incorporated
Series-
PackageTape & Reel (TR)
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200 MHz
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Base Product NumberDDTD114
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