Model: | EPC2108 |
---|---|
Product Category: | FET, MOSFET Arrays |
Manufacturer: | EPC |
Description: | GANFET 3 N-CH 6 |
Encapsulation: | - |
Package: | Tape & Reel (TR) |
RoHS Status: | 1 |
Quantity
Price
Total Price
1
$1.7600
$1.7600
10
$1.4600
$14.6000
100
$1.1600
$116.0000
500
$0.9800
$490.0000
2500
$0.7900
$1,975.0000
5000
$0.7600
$3,800.0000
12500
$0.7400
$9,250.0000
TYPE | DESCRIPTION |
Mfr | EPC |
Series | eGaN® |
Package | Tape & Reel (TR) |
Product Status | OBSOLETE |
Package / Case | 9-VFBGA |
Mounting Type | Surface Mount |
Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 60V, 100V |
Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V |
Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
Supplier Device Package | 9-BGA (1.35x1.35) |