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  • image of IGBT Modules>NXH800A100L4Q2F2P2G
  • image of IGBT Modules>NXH800A100L4Q2F2P2G
Model NXH800A100L4Q2F2P2G
Product Category IGBT Modules
Manufacturer Sanyo Semiconductor/onsemi
Description MASS MARKET GEN
Encapsulation -
Package Tray
RoHS Status 1
Price: $122.8300
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Total Price

1

$122.8300

$122.8300

10

$117.0200

$1,170.2000

36

$114.5300

$4,123.0800

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image of IGBT Modules>22161879
22161879
Model
22161879
Product Category
IGBT Modules
Manufacturer
Sanyo Semiconductor/onsemi
Description
MASS MARKET GEN
Encapsulation
-
Package
Tray
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Phase Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 400A
NTC ThermistorYes
Supplier Device Package51-PIM/Q2PACK (93x47)
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)309 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Power - Max714 W
Current - Collector Cutoff (Max)20 µA
Input Capacitance (Cies) @ Vce49700 pF @ 20 V
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